SOI SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a small-sized SOI semiconductor device. SOLUTION: This SOI semiconductor device 1000 is provided with at least an SOI substrate 50 containing an insulating film 2 and a semiconductor layer 3 formed on the film 2 and active semiconductor elements 60 formed on the semiconductor layer 3. The semiconductor elements 60 are formed in an element forming area 70 surrounded by a separating area 4 which is formed to separate the semiconductor layer 3 into island-like states. In part (80) of the semiconductor layer 3 except the element forming area 70 in which the active semiconductor elements 60 are formed, a gettering layer 9 containing an impurity at a high concentration is formed. The gettering layer 9 is not formed in the element forming area 70 in which the semiconductor elements 60 are formed. COPYRIGHT: (C)2004,JPO