| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor epitaxial growth film in which the defect density in a compound semiconductor crystal film is reduced when the compound semiconductor crystal is grown. SOLUTION: On an n-type InP substrate 10, the crystal film constituted of an n-type InP buffer layer 12, an undoped InGaAs optical absorption layer 14, and an n-type InP cap layer 16 is grown by a MOCVD method. In the InGaAs optical absorption layer 14, a composition rate is periodically changed based on a lattice matching condition of±2%, namely between In<SB>0.54</SB>Ga<SB>0.46</SB>As and In<SB>0.52</SB>Ga<SB>0.48</SB>As every 80 nm in the thickness direction. COPYRIGHT: (C)2004,JPO
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