| 摘要 |
PROBLEM TO BE SOLVED: To provide a reference potential generating circuit which reduces the imprint film fatigue of a ferromagnetic film of a reference cell in a semiconductor storage device using a ferromagnetic capacitor, and to provide a reliable semiconductor storage device by preventing the deterioration of the ferromagnetic film of the reference cell so as to reduce the failure of the semiconductor storage device using the ferromagnetic capacitor. SOLUTION: The semiconductor storage device is provided with a first signal line to be connected to a first reference cell and a second signal line to be connected to a second reference cell. Further, the semiconductor storage device is provided with a potential supply circuit which has; a first state for supplying a potential corresponding to a first data to the first reference cell through the first signal line and supplying a potential corresponding to a second data to the second reference cell through the second signal line in response to a second control signal at a first potential level in response to a second control signal at a first potential level; and a second state for supplying the potential corresponding to the second data to the first reference cell through the first signal line and supplying the potential corresponding to the first data to the second reference cell through the second signal line in response to a second control signal at a first potential level in response to the second control signal at a second potential level. COPYRIGHT: (C)2004,JPO
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