LIGHT EMITTING DEVICE OF NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A light emitting device and a method for manufacturing the same are provided to be capable of reducing potential density and improving luminous efficiency by growing multiple quantum well structure using a nitride semiconductor. CONSTITUTION: A silicon nitride layer(101) is deposited on a sapphire substrate(100). A GaN buffer layer(103) is grown on the silicon nitride layer at low temperature. After ramp-up the GaN buffer layer, an n-type InGaN semiconductor layer(105) is formed. A light emitting layer(110) of multiple quantum well structure is formed by periodically stacking an InxGa1-xN layer(107) and an InyGa1-yN layer(109) on the InGaN semiconductor layer. A p-type semiconductor layer(111) doped in Mg is formed on the light emitting layer and activated by annealing.