发明名称 PHOTOMASK, FOCUS MONITOR METHOD, EXPOSURE MONITOR METHOD AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To highly sensitively and accurately monitor a deviation of focus position or a variation of the exposure of an exposure light source. <P>SOLUTION: The photomask is provided with a device pattern having an opening part and a mask pattern and a focus monitor pattern or an exposure monitor pattern which has the opening part and the mask pattern and has the same plane pattern shape with at least one part of region of the device pattern on a photomask. The phase difference of transmitted exposure light between the opening part and the mask part of the focus monitor pattern is different from the phase difference of the transmitted exposure light between the opening part and the mask part of the device pattern. Additionally, the opening part of the exposure monitor pattern has an exposure light transmittance different from that of the opening part of the device pattern. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003287870(A) 申请公布日期 2003.10.10
申请号 JP20020090010 申请日期 2002.03.27
申请人 TOSHIBA CORP 发明人 SUTANI TAKUJI;DEWA KYOKO;FUJISAWA TADAHITO;INOUE SOICHI
分类号 G03F1/26;G03F1/44;G03F1/68;G03F7/20;G03F7/207;G03F9/02;H01L21/027 主分类号 G03F1/26
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