| 摘要 |
PROBLEM TO BE SOLVED: To provide a film piezoelectric resonator, where the values of the electromechanical coupling coefficient K<SB>t</SB><SP>2</SP>and the quality factor Q are very high by removing the damages of a resonance excitation section due to etching, or a film piezoelectric resonator which enables the manufacturer to form film piezoelectric resonators having a plurality of different resonance frequencies on the same substrate, without increasing the number of lithographic processes. SOLUTION: This film piezoelectric resonator possesses a cavity 22 within a monocrystal silicon substrate 21 and has a piezoelectric excitation section 27 consisting of the first electrode 24, a piezoelectric film 25, and the second electrode 26 on the monocrystal silicon layer 23 located above the internal cavity 22. COPYRIGHT: (C)2004,JPO
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