| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelctric memory capable of holding multi-valued memory by hardly changing a circuit of conventional technology. SOLUTION: Multi-valued memory is performed by changing applied time of a write pulse according to a value to be memorized. One voltage source is enough for a write pulse. The ferroelectric having a multi-valued memory function with only one voltage source can be provided when the voltage for reset or read-pulse is made the same with the voltage for the write-pulse. COPYRIGHT: (C)2004,JPO
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