| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas for plasma reaction, which makes handling for a source gas easy, and forms a fluorine-containing organic film having a low relative permittivity at a high deposition rate, and to provide a method for forming the fluorine-containing organic film with the use of the gas, and the fluorine-containing organic film obtained by the forming method. SOLUTION: The method for forming the fluorine-containing organic film on a substrate with a chemical vapor deposition method, is characterized by using the gas for the plasma reaction, which includes at least one sort of a 3-8C unsaturated cyclic hydrofluorocarbon. The fluorine-containing organic film is characterized by being formed by the forming method. COPYRIGHT: (C)2004,JPO
|
