FLASH MEMORY CELL AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A flash memory cell and a fabrication method thereof are provided which can improve the disturbance characteristics of the cell by forming a source and a drain of the cell with one metal line, and can reduce a parasitic capacitance and can simplify its fabrication process. CONSTITUTION: A word line is connected to a gate electrode. A source and a drain are formed in a horizontal direction and a vertical direction with the above word line in turn, by bordering to the word line. A contact line(280) connects an adjacent pair of a source and a drain electrically among the sources and the drains formed in the horizontal direction. And a bit line(300) is connected to the contact line to connect the source and the drain formed in the horizontal direction electrically.