| 摘要 |
A decoupling device for decoupling a high-frequency noise wave in a digital circuit is formed as a line device including a portion of a semiconductor substrate, an insulator film formed thereon as a gate oxide film, and an interconnect line formed thereon as a gate electrode. The line capacitance between the interconnect line and the semiconductor substrate is 100 pF or above, whereby the decoupling device effectively decouples the electromagnetic noise wave generated by a switching device in a frequency range between 10 and 1000 GHz. |
