| 摘要 |
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer comprised of a magnetic insulator. Such magnetic insulator can be a ferrite or a perovskite ferromagnetic oxide. Also, a Hall effect device can have a ferromagnetic element that is a multilayer (e.g., a bilayer), and a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.
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