| 摘要 |
<p>A novel microwave enhanced method of semiconductor etching consisting in etching of inserted in a reaction vessel semiconductor substrates, distinguished by the fact that the alkaline solution is activated and heated with microwave energy in an activation chamber of etching solution (ZB2), while the irradiation is carried out in the microwave supplied system with controlled power and the activated and heated to a given temperature alkaline solution flows through a conduit system to the reaction vessel (NR), where the etching of semiconductor structures takes place. The microwave enhanced system for semiconductor etching, distinguished by the fact that inside the resonator chamber of microwave supplying system (UZM) there is an activation chamber of alkaline solution (ZB2), filled with alkaline solution. The chamber is connected with a conduit system with a reaction vessel (NR) where semiconductor structures are placed, provided that the activation chamber of alkaline solution is supplied with alkaline solution from the container of etching solution (ZB1), whereas the alkaline solution is taken off the reaction vessel (NR) to the end container (ZB3).</p> |
