| 摘要 |
A method of manufacturing a semiconductor device is disclosed which can reduce the manufacturing cost of the semiconductor device by preventing contamination and damage of an extremely thin wafer and of an extremely thin semiconductor chip fabricated from the extremely thin wafer. The semiconductor device is manufactured by the steps of providing a wafer and a wiring substrate having product forming areas longitudinally and transversely, covering a main surface of the wafer with a protective tape, grinding a back side of the wafer into an extremely thin wafer having a thickness of 100 mum, affixing the extremely thin wafer to a dicing tape, dicing the extremely thin wafer to form extremely thin semiconductor chips, picking up the chips on the dicing tape one by one and fixing the picked-up chip to each of the product forming areas on the wiring substrate, removing the protective tape from a main surface of each semiconductor chip, performing wire bonding, covering the semiconductor chips and the wires with an insulating resin layer, forming bump electrodes on a back side of the wiring substrate, cutting the wiring substrate in an affixed state to a support member to a halfway dept of the support member together with the insulating resin layer, thereby forming plural semiconductor devices, and removing each of the semiconductor devices from the support member to afford a semiconductor device having a thickness of not larger than 0.5 mm.
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