发明名称 METHOD FOR FORMING INSULATION FILM
摘要 <p>A process for forming an insulation film on a basic material for an electronic device comprising more than one step for controlling the characteristics of the insulation film in which an insulation film is formed on the surface of the basic material under an identical operation principle. An insulation film having a high cleanliness can be formed by performing cleaning, oxidizing, nitriding, film-thinning, and the like, while avoiding exposure to the atmosphere. Furthermore, simplification of the system is realized by taking various steps pertaining to formation of an insulation film using an identical operation principle and an insulation film having excellent characteristics can be formed efficiently.</p>
申请公布号 WO2003083925(P1) 申请公布日期 2003.10.09
申请号 JP2003004091 申请日期 2003.03.31
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