发明名称 |
MASK REPAIR WITH ELECTRON BEAM-INDUCED CHEMICAL ETCHING |
摘要 |
The present invention discloses a method of fabricating and repairing a mask without damage and an apparatus including a holder to mount a substrate; a stage to position the holder in a chamber; a pumping system to evacuate the chamber; an imaging system to locate an opaque defect in the substrate; a gas delivery system to dispense a reactant gas towards the defect; and an electron delivery system to direct electrons towards the opaque defect. |
申请公布号 |
WO03003118(A3) |
申请公布日期 |
2003.10.09 |
申请号 |
WO2002US20016 |
申请日期 |
2002.06.21 |
申请人 |
INTEL CORPORATION |
发明人 |
LIANG, SHOUDENG;STIVERS, ALAN |
分类号 |
C23C16/04;G03F1/72;H01J37/305;H01L21/00;H01L21/027 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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