| 摘要 |
The invention relates to a semiconductor storage location, particularly in a DRAM storage location field having a selection transistor (12) and a storage capacitor (14). According to the invention, the storage capacitor (14) has a first (16) and a second (18) capacitor electrode that connects the first capacitor electrode (16) to a read-out line (22) via the selection transistor (12). In addition, a control terminal (32) of the selection transistor (12) is connected to a control line (24). The invention is characterized in that a layer of a super ionic conductor (20) is placed between the first and the second capacitor electrode (16, 18) of the storage capacitor (14). The high conductivity of the super ionic conductor (20) for ions in conjunction with a negligible electron conductivity enables the production of extremely high capacities in a small space. |
