| 摘要 |
<p>A vertical cavity laser (Figure 3 )includes an optical cavity (116) adjacent to a first mirror (112), the optical cavity (116) having a semiconductor portion (130) and a dielectric spacer layer (160). A dielectric DBR (114) is deposited adjacent to the dielectric spacer layer (160). The interface (162) between the semiconductor portion (130) of the optical cavity (116)and the dielectric spacer layer (160) is advantageously located at or near a null (164) in the optical standing wave intensity pattern (166) of the vertical cavity laser ( Figure 3 ) to reduce the losses or scattering associated with that interface (162).</p> |
