METHODS FOR MANUFACTURING COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR USING CHEMICAL REACTION AND DIFFUSION BY HEATING, COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR MANUFACTURED USING THE METHOD, AND PHOTOCELL, ELECTRONIC CIRCUIT, TRANSISTOR, AND MEMORY USING THE SAME

摘要

Provided are methods for manufacturing a compound semiconductor and a compound insulator using chemical reaction and diffusion induced by heating, a compound semiconductor and a compound insulator formed using the methods, and a photocell, an electronic circuit, a transistor, and a memory including the compound semiconductor or the compound insulator. The method for manufacturing a compound semiconductor or a compound insulator involves forming a stacked structure including a rare earth transition metal intermediate layer, which is highly reactive to oxygen and/or sulfur, interposed between dielectric layers containing oxygen and/or sulfur and heating the stacked structure to induce chemical reaction and diffusion between the dielectric layers and the intermediate layer, wherein the heating is performed at different temperatures for the compound semiconductor and the compound insulator.