| 摘要 |
<p>A magnetoresistance sensor comprising a lower electrode layer, an insulator matrix provided on the lower electrode layer, a discontinuous structural film comprising a plurality of insular metals dispersed into the insulator matrix, a magnetoresistance film provided on the discontinuous structural film, and an upper electrode layer provided on the magnetoresistance film. Central region of the discontinuous structural film is etched partially and, at the etched part, the upper and lower electrode layers are conducting through the magnetoresistance film and the insular metal.</p> |
