| 摘要 |
<p>A technique of protecting an interlayer insulating film formed of an organic low-dielectric material from damage caused during the semiconductor process, reducing the leak current of the interlayer insulating film, and improving the reliability of the semiconductor device. The semiconductor device comprises an organic insulating film (5, 26, 28) having an opening. The organic insulating film (5, 26, 28) has a modified portion (5a, 26a, 28a) facing the opening. The modified portion (5a, 26a, 28a)contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portion (5a, 26a, 28a) is lower than that of the nitrogen atoms. While suppressing the corrosion of the conductor buried in the opening, the modified layer (5a, 26a, 28a) protects the organic insulating film (5, 26, 28) from damage caused during the semiconductor process.</p> |
