发明名称 |
Imaging array and methods for fabricating same |
摘要 |
A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.
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申请公布号 |
US2003189175(A1) |
申请公布日期 |
2003.10.09 |
申请号 |
US20020116469 |
申请日期 |
2002.04.03 |
申请人 |
LEE JI UNG;ALBAGLI DOUGLAS;POSSIN GEORGE EDWARD;WEI CHING-YEU |
发明人 |
LEE JI UNG;ALBAGLI DOUGLAS;POSSIN GEORGE EDWARD;WEI CHING-YEU |
分类号 |
G01T1/20;G01T1/24;H01L27/14;H01L27/146;H01L31/09;H04N5/32;(IPC1-7):G01T1/24 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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