发明名称 |
STRUCTURE, FABRICATION, AND CORRECTIVE TEST OF ELECTRON-EMITTING DEVICE HAVING ELECTRODE CONFIGURED TO REDUCE CROSS-OVER CAPACITANCE AND/OR FACILITATE SHORT-CIRCUIT REPAIR |
摘要 |
An electron-emitting device (20, 70, 80, or 90) contains an electrode, either a control electrode (38) or an emitter electrode (32), having a specified portion situated off to the side of the bulk of the electrode. For a control electrode, the specified portion is an exposure portion (38EA or 38EB) having openings that expose electron-emissive elements (50A or 50B) situated over an emitter electrode. For an emitter electrode, the specified portion is an emitter-coupling portion situated below at least one electron-emissive element exposed through at least one opening in a control electrode. Configuring the device in this way enables the control-electrode-to-emitter-electrode capacitance to be quite small, thereby enhancing the device's switching speed. If the specified portion of the electrode becomes short circuited to the other electrode, the short-circuit defect can be removed by severing the specified portion from the remainder of its electrode. |
申请公布号 |
WO03050848(A3) |
申请公布日期 |
2003.10.09 |
申请号 |
WO2002US38812 |
申请日期 |
2002.12.03 |
申请人 |
CANDESCENT INTELLECTUAL PROPERTY SERVICES, INC.;SONY CORPORATION |
发明人 |
RADIGAN, STEVEN, J.;BONN, MATTHEW, A.;KEMMOTSU, HIDENORI;FAHLEN, THEODORE, S. |
分类号 |
H01J3/02 |
主分类号 |
H01J3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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