METHOD OF FORMING FERROELECTRIC FILM, FERROELECTRIC MEMORY, PROCESS FOR PRODUCING FERROELECTRIC MEMORY, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

A method of forming a ferroelectric film, comprising irradiating amorphous oxide film (30) disposed on substrate (10) with pulsed laser beams or lamp light so as to create microcrystal nuclei of oxide (40). Ferroelectric substance (50) can be formed by irradiating the film having microcrystal nuclei (40) with pulsed laser beams or lamp light so as to crystallize the oxide.