NONLINEAR RESISTANCE ELEMENT

摘要

PURPOSE:To obtain the nonlinear resistance element which has high linearity and is suitable for high-finess display by interposing a composite layer formed by incorporating oxygen into a semiconductor layer essentially consisting of Te between a 1st electrode layer and a 2nd electrode layer. CONSTITUTION:The composite layer 3 formed by incorporating oxygen into the semiconductor material essentially consisting of the Te is interposed between the 1st electrode layer 2 and the 2nd electrode layer 6. The oxide of the Te, etc., is easily formed at the crystal grain boundary if the semiconductor layer is formed as the composite layer 3 formed by incorporating the oxygen into this layer. Barriers are further formed high by this oxide. The nonlinear resistance element which has the high nonlinearity of the element resistance and hardly generates crosstalks even when used for the high-fineness display is obtd. in this way.