发明名称 |
Superjunction LDMOST using an insulator substrate for power integrated circuits |
摘要 |
A SJ-LDMOST device offers significantly improved on-state, off-state, and switching characteristics of lateral power devices for power integrated circuits applications. The device is fabricated on an insulator substrate. The proposed structure achieves charge compensation in the drift region by terminating the bottom of the SJ structure by a dielectric hence eliminating the undesirable vertical electric field component and preventing any substrate-assisted-depletion. The device structural arrangement thereby achieve a uniform distribution of the electric field thus maximizing the BV for a given drift region length.
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申请公布号 |
US2003190789(A1) |
申请公布日期 |
2003.10.09 |
申请号 |
US20020117698 |
申请日期 |
2002.04.04 |
申请人 |
SALAMA C. ANDRE T.;NASSIF SAMEH KHALIL |
发明人 |
SALAMA C. ANDRE T.;NASSIF SAMEH KHALIL |
分类号 |
H01L29/06;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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