发明名称 CVD METHOD USING PULSED GAS FLOW
摘要 <p>A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.</p>
申请公布号 WO2003083170(P1) 申请公布日期 2003.10.09
申请号 US2003008650 申请日期 2003.03.20
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