| 摘要 |
A surface-emitting laser, such as a VCSEL (100), for generating single-transverse mode laser light at a lasing wavelength, has a first mirror (121) and a second mirror (148) positioned so as to define a laser cavity therebetween, and a semiconductor active region (141) disposed between the first and second mirrors (121, 148) for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure (150) is disposed within the laser cavity and between the active region (141) and one of the first and second mirrors (141, 148), the annular antiguide structure (150) comprising an antiguide material (n2) and having a central opening, the central opening comprising a second material (n1) having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure (150) causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.
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