| 摘要 |
A method of making a photolithographic mask includes forming a metal-silicon layer on a substrate, and processing at least a portion of the metal-silicon layer. The metal-silicon layer has a first thickness and the portions of the metal-silicon layer are processed to a second thickness that is less than the first thickness. The method also includes forming a reflector layer on the metal-silicon layer to produce a mask blank and then forming the mask from the mask blank. The mask blank includes the substrate, metal-silicon layer, and reflector layer.
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