| 摘要 |
PURPOSE:To keep the superconductive characteristics of an oxide superconductor excellently, and to decrease the interface charges of a MOSFET by forming the wiring layer of the oxide superconductor onto a substrate, coating the surface of the wiring layer with a silver layer and annealing the whole in an atmosphere containing no oxygen. CONSTITUTION:The wiring layer 3 of an oxide superconductor is formed onto a substrate 1, and the surface of the layer 3 is coated with a silver layer 5. A MOSFET 7 is shaped onto the substrate 1, and an Si region 11, source/drain regions 12, 13, a gate region 14 and a gate insulating film 15 are formed to the FET 7. Source/drain electrodes 16, 17 are formed onto the regions 12, 13, a gate electrode 18 is connected to the region 14, and the layer 3 is connected to the electrode such as the electrode 16 of the FET 7 through the layer 5. A semiconductor device is manufactured in such a manner that the layer 3 is shaped under an atmosphere containing oxygen and coated with the layer 5, the FET 7 is formed, the layer 3 is kept under the state in which the layer 3 is coated with the layer 5, and the whole is annealed in an atmosphere containing no oxygen. Accordingly, the superconductive characteristics of the oxide superconductor are maintained excellently, the interface charges of the FET are decreased, and the mobility of carriers can be improved. |
