| 摘要 |
In order to constantly produce a uniform SOI substrate without defect at a low cost by preventing destruction of a porous layer prior to separation of bonded substrates and effecting separation of the bonded substrates securely and easily, in a process for producing a semiconductor substrate comprising forming a non-porous semiconductor layer on a first substrate having porous layers formed on a surface thereof, forming an insulating layer on a surface thereof, bonding the insulating layer to a second substrate, and separating the porous layers, thereby transferring the insulating layer and the non-porous semiconductor layer onto the surface of the second substrate, the first porous layer is formed with a low porosity while the second porous layer is made thin to such extent as to be fragile to easily separate the first and the second substrates.
|
