发明名称 POLISHING PAD AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD USING THE POLISHING PAD
摘要 A polishing pad of a novel structure capable of effectively controlling the slurry flow and performing stable and highly-accurate polishing when polishing a surface of a semiconductor substrate such as a wafer by using the CMP method. A groove (16) is formed to extend substantially in the direction of circumference with respect to the surface of the pad substrate (12) made from synthetic resin. The groove (16) has an inner circumferential side wall (20) and an outer circumferential side wall (22) which are substantially parallel to each other and which are inclined with respect to the center axis (18) of the pad substrate (12).
申请公布号 WO03083918(A1) 申请公布日期 2003.10.09
申请号 WO2003JP04189 申请日期 2003.04.01
申请人 TOHO ENGINEERING KABUSHIKI KAISHA;SUZUKI, TATSUTOSHI 发明人 SUZUKI, TATSUTOSHI
分类号 B24B37/20;B24B37/24;B24B37/26;B24D3/28;H01L21/302;H01L21/304;H01L21/461;(IPC1-7):H01L21/304 主分类号 B24B37/20
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