发明名称 Method of forming deposited film
摘要 In a deposited-film-forming method of forming a compound film on a substrate by a chemical reaction between the particles of a raw material emitted from a raw material particle generation source opposed to the substrate in the direction of the substrate, and the atoms of a reactive gas supplied to a flying space of the particles of the raw material, the space being interposed between the substrate and the raw material particle source, the atoms of a rare gas in an excited state are supplied to the flying space of the particles of the raw material, in order to ionize the atoms of the reactive gas and the particles of the raw material and thereby induce the chemical reaction.
申请公布号 US2003190412(A1) 申请公布日期 2003.10.09
申请号 US20030400872 申请日期 2003.03.28
申请人 KOIKE ATSUSHI;KANAI MASAHIRO;YAMAGUCHI HIROHITO 发明人 KOIKE ATSUSHI;KANAI MASAHIRO;YAMAGUCHI HIROHITO
分类号 C23C14/34;C23C14/00;C23C14/24;C23C14/35;C23C14/56;H01J37/34;(IPC1-7):B05D1/12;C23C16/00 主分类号 C23C14/34
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