| 摘要 |
<p>PURPOSE:To obviate the generation of a display defect in a liquid crystal display device by laminating a silicon oxide film and silicon nitride film in this order on at least a part of the oxidized parts on gate electrodes as a gate insulating film. CONSTITUTION:The gate insulating film 14 is formed of the laminate of the three-layered structure consisting of the 1st gate insulating film 14a formed by partially anodizing the parts where the thin-film transistors of gate electrodes 12 are formed and the parts intersecting with the gate electrodes 11, the 2nd gate insulating film 14b consisting of the silicon oxide formed to cover this film and the 3rd gate insulating film 14c consisting of the silicon oxide formed thereon. The probability that a pinhole is generated at the same point of the respective layers is, therefore, extremely low and even if the pinhole is generated in one film, the pinhole is usually complemented by the other film laminated on the upper layer or lower layer of the pinholed point and, therefore, the insulation defect hardly arises. The liquid crystal device which decreases the display defects is obtd. in this way.</p> |
