发明名称 CVD METHOD USING PULSED GAS FLOW
摘要 A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
申请公布号 WO03083170(A1) 申请公布日期 2003.10.09
申请号 WO2003US08650 申请日期 2003.03.20
申请人 APPLIED MATERIALS, INC. 发明人 LAW, KAM, S.;SHANG, QUANYUAN;HARSHBARGER, WILLIAM, R.;MAYDAN, DAN;CHOI, SOO, YOUNG;PARK, BEOM, SOO;YADAV, SANJAY;WHITE, JOHN, M.
分类号 C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316;H01L21/318;H01L21/321;H01L21/336;(IPC1-7):C23C16/515 主分类号 C23C16/40
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