| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to reduce contact resistance, to remove surface defects and to enhance refresh time by reducing the electric field of a channel. CONSTITUTION: A junction region is formed by implanting dopants into a semiconductor substrate(21). An interlayer dielectric(27) is formed on the semiconductor substrate(21). A contact hole is formed by dry-etching of the interlayer dielectric. The junction region is recessed by wet-etching. A storage node is then formed in the contact hole.
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