| 摘要 |
PURPOSE: A method for adjusting CD(Critical Dimension) of patterns is provided to be capable of easily forming fine patterns. CONSTITUTION: After forming a thin film(12) on a semiconductor substrate(11), a photoresist layer is coated on the thin film(12). A photoresist pattern(13) is formed by exposing and developing the photoresist layer. The critical dimension of the photoresist pattern(13) is controlled by using RF(Radio Frequency) plasma, thereby forming a CD controlled photoresist pattern(13a). The thin film(12) is etched by using the CD controlled photoresist pattern(13a) as a mask.
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