| 摘要 |
PURPOSE: An ion-implantation apparatus is provided to be capable of easily controlling ion-beam and generating alarm signal by sensing abnormal state. CONSTITUTION: An ion-implantation apparatus comprises an ion implanting chamber(210) having a substrate supporter(218), an ion supply source(202) connected to the ion implanting chamber, an ion current measurement part for measuring ion current of ion-beam, a location control part for controlling the ion current measurement part, and an alarm part(240,242) for generating an alarm signal. The alarm part(240,242) controls the operation of the ion supply source(202) according to the location control state of the ion current measurement part and generates the alarm signal.
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