发明名称 |
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR |
摘要 |
This specification relates to a semiconductor device that comprises a semiconductor substrate 11 , a source region 12 and a drain region 13 , which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152 ; and a control gate electrode 156 that is formed on the ferroelectric film 154 , wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154 , and the ferroelectric film 154 and the control gate electrode 156 , and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms. |
申请公布号 |
AU2003221212(A1) |
申请公布日期 |
2003.10.08 |
申请号 |
AU20030221212 |
申请日期 |
2003.03.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKASHI NISHIKAWA;TAKASHI OHTSUKA |
分类号 |
H01L21/28;H01L29/78;(IPC1-7):H01L21/824;H01L27/105;H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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