| 摘要 |
PURPOSE: A method for fabricating a magnetic RAM(MRAM) is provided to improve characteristics and reliability of the device by improving electrical characteristics of the device by patterning a MTJ(Magnetic Tunneling Junction) cell using two masks. CONSTITUTION: The magnetic RAM comprises a transistor comprised in an active region of a semiconductor device and a MTJ(Magnetic Tunneling Junction) cell(49) connected to a drain of the above transistor. The MTJ cell comprises a magnetic pinned layer(39) formed on its bottom and a tunneling barrier layer(45) and a magnetic free layer(47) patterned more larger than the magnetic pinned layer on the top of the magnetic pinned layer.
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