| 摘要 |
The capacitive structure comprises two electrodes (31,45) wherein one electrode (31) comprises a set of strips (25,26) superimposed and displaced one from another with respect to a central trunk, and the other electrode (45) comprises two sets of strips (40,41) which are inserted between the strips (25,26) of the first electrode (31). The strips (40,41) of each set are linked by a common wall (42,43), and the two common walls (42,43) are linked by a transverse part (44) above the first electrode (31) and forming a connection pad for the second electrode (45). The two electrodes (31,45) are separated by a dielectric layer implemented on the basis of materials chosen from the group comprising ferroelectric and/or pyroelectric oxides. The dielectric layer is implemented by a superimposition of elementary layers of different materials forming a nano laminated structure, and the stoichiometry of the materials varies from one elementary layer to another. The surface of each electrode (31,45) is covered with a layer of a material which is a barrier to the diffusion of oxygen. The different strips (25,26,40,41) of each electrode are made of the same material, in particular of copper. The method (claimed) for the manufacturing of capacitive structure of the electronic micro component (claimed) comprises the steps of depositing a metallic layer so to define a channel, depositing a metallic layer in the formed channel, repeating the two preceding steps with displacing the position of the structuring layer so to cover only a part of adjacent metallic layer, depositing a dielectric layer above the first electrode, and depositing a conducting material with inserting between the metallic layers of the first electrode so to form the second electrode.
|
