| 发明名称 |
PATTERNING SEMICONDUCTOR LAYERS USING PHASE SHIFTING AND ASSIST FEATURES |
| 摘要 |
A photomask and method of patterning a photosensitive layer using a photomask, the photomask including a substrate and a film coupled to substrate. The film is etched with a phase shifted assist feature, a low aspect ratio assist feature or phase shifted low aspect primary features. |
| 申请公布号 |
AU2003213752(A1) |
申请公布日期 |
2003.10.08 |
| 申请号 |
AU20030213752 |
申请日期 |
2003.03.06 |
| 申请人 |
INTEL CORPORATION (A DELAWARE CORPORATION) |
发明人 |
RICHARD SCHENKER;GARY ALLEN |
| 分类号 |
G03F1/00;G03F1/26;G03F1/32;G03F7/00;G03F7/20;G06F17/50;H01L23/58;H01L29/06 |
主分类号 |
G03F1/00 |
| 代理机构 |
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