| 摘要 |
A practical semiconductor radiation detector capable of collecting electrons (205) rapidly with a large volume is disclosed. A multiple layers of grid electrodes (303, 304, 305; 403, 404, 405; 503, 504, 505; 603, 604, 605; 703, 704, 705; 803, 804; 903, 904, 905; 1103; 1403, 1404; 1503, 1504; 1603, 1604; 1703, 1704) around an anode (302; 402; 502; 602; 702; 802; 902; 1102; 1402; 1502; 1602; 1702) formed on a semiconductor element (301; 401; 501; 601; 701; 801; 901; 1001; 1101; 1201; 1501; 1601; 1701) limits the generation of the induced charge signal for the anode (302; 402; 502; 602; 702; 802; 902; 1102; 1402; 1502; 1602; 1702) to the space in the neighborhood of the anode (302; 402; 502; 602; 702; 802; 902; 1102; 1402; 1502; 1602; 1702), while at the same time making it possible to collect the electrons (205) rapidly. As a result of limiting the space for generating the induced charge by the grid electrodes (303, 304, 305; 403, 404, 405; 503, 504, 505; 603, 604, 605; 703, 704, 705; 803, 804; 903, 904, 905; 1103; 1403, 1404; 1503, 1504; 1603, 1604; 1703, 1704), the energy resolution is improved even for a thick semiconductor element. Also, the capability of rapidly collecting the electrons (205) due to the high field strength generated by the grid electrodes (303, 304, 305; 403, 404, 405; 503, 504, 505; 603, 604, 605; 703, 704, 705; 803, 804; 903, 904, 905; 1103; 1403, 1404; 1503, 1504; 1603, 1604; 1703, 1704) makes a sensitive volume of the whole semiconductor and thus achieves a high radiation detection efficiency.
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