| 摘要 |
PURPOSE: A method for forming a contact plug of a semiconductor device is provided to be capable of restraining out-diffusion of boron in an insulating layer and regeneration of a native oxide layer. CONSTITUTION: After forming an insulating layer(13) on a semiconductor substrate(11) having a junction region(12), a contact hole is formed to expose the junction region(12). The contact hole is cleaned by H2-RTP(Rapid Thermal Processing) while flowing a gas containing phosphorous, wherein the gas is a diluted PH3 gas. Thereby, the out-diffusion of boron and the regeneration of a native oxide layer are restrained.
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