| 摘要 |
PURPOSE: A method for cleaning a chamber is provided to be capable of preventing the generation of residues of a reaction gas by using a cold wall system. CONSTITUTION: A thin film is deposited in a reactor by CVD(Chemical Vapor Deposition)(11). The inner part and inner walls of the chamber are cleaned by plasma(12). The step of depositing the thin film is performed in a cold wall system. Also, the plasma is generated by one method selected from the group consisting of DC plasma, RF plasma, microwave plasma, TCP and ICP plasma.
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