| 摘要 |
PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided to control the diffusion of boron ions caused by a thermal budget by implanting nitrogen ions into a boron-doped material layer for forming the gate electrode so that the diffusion of boron ions is reduced. CONSTITUTION: A gate insulation layer(13) is formed on a semiconductor substrate(11). A material layer(14) for forming the gate electrode is formed on the gate insulation layer, doped with impurity ions of the first conductivity type. A mask pattern(15) is so formed to selectively expose the material layer for forming the gate electrode. Predetermined impurity ions are implanted into the exposed material layer for forming the gate electrode by using the mask pattern so that the diffusion and activation of the impurity ions of the first conductivity type is controlled. Impurity ions of the first conductivity type are implanted into the exposed gate electrode for forming the gate electrode.
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