发明名称 Stereolithographic method and apparatus for fabricating spacers for semiconductor devices and resulting structures
摘要 Spacers for use on a surface of a semiconductor device component may be fabricated from dielectric materials. For example, stereolithographic or other processes in which a plurality of layers are formed that are contiguous, at least partially superimposed relative to one another, and mutually adhered. These processes may include use of a machine vision system for recognition of the position and orientation of a semiconductor device component upon disposal or fabrication of one or more spacers thereon. One or more of the insulative spacers may be formed or disposed on the surface of a semiconductor device component prior to securing the semiconductor device component to a higher level component, such as a carrier substrate. The spacers may define a minimum, substantially uniform distance between the semiconductor device components. The spacers may also prevent tilting or tipping of one of the semiconductor device components relative to the other.
申请公布号 US6630365(B2) 申请公布日期 2003.10.07
申请号 US20020266464 申请日期 2002.10.08
申请人 MICRON TECHNOLOGY, INC. 发明人 FARNWORTH WARREN M.;WOOD ALAN G.
分类号 G03F7/20;H01L21/60;H05K1/02;H05K3/00;H05K3/30;(IPC1-7):H01L21/66;H01L21/44 主分类号 G03F7/20
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