发明名称 Buried channel CMOS imager and method of forming same
摘要 A buried channel CMOS imager having an improved signal to noise ratio is disclosed. The buried channel CMOS imager provides reduced noise by keeping collected charge away from the surface of the substrate, thereby improving charge loss to the substrate. The buried channel CMOS imager thus exhibits a better signal-to-noise ratio. Also disclosed are processes for forming the buried channel CMOS imager.
申请公布号 US6630701(B1) 申请公布日期 2003.10.07
申请号 US19990374988 申请日期 1999.08.16
申请人 MICRON TECHNOLOGY, INC. 发明人 RHODES HOWARD E.
分类号 H01L21/00;H01L27/146;H01L31/062;H01L31/113;(IPC1-7):H01L31/062 主分类号 H01L21/00
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