发明名称 DRAM read and write circuit
摘要 A dynamic random access memory circuit including a memory plane formed of an array of memory cells, as well as at least two cache registers enabling access to the memory plane and adapted to ensure the reading from and the writing into the memory. The circuit also includes several registers indicating the location of new words to be written, each of the indicative registers being coupled with one of the cache registers adapted to ensuring the writing into the memory.
申请公布号 US6631441(B2) 申请公布日期 2003.10.07
申请号 US20000730498 申请日期 2000.12.04
申请人 STMICROELECTRONICS S.A. 发明人 HARRAND MICHEL;BOISE DAVID
分类号 G06F12/08;G11C7/10;(IPC1-7):G06F12/00 主分类号 G06F12/08
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