发明名称 A HIGH TUNABILITY CMOS DELAY ELEMENT
摘要 The delay element consists of a differential amplifier (M15, M8, M2, M6, M5) in which the load transistors (M2, M5) are associated to respective gate biasing transistors (M21, M22) connected in a source follower configuration, and to feedback transistors (M3, M4), which implement a negative impedance in parallel to a positive impedance represented by each of the load transistors (M2, M5). The modulation of the delay is achieved by modulating the bias currents of the load transistors (M2, M5), the feedback transistors (M3, M4) and the gate biasing transistors (M21, M22).
申请公布号 CA2290723(C) 申请公布日期 2003.10.07
申请号 CA19992290723 申请日期 1999.11.25
申请人 CSELT - CENTRO STUDI E LABORATORI TELECOMMUNICAZIONI S.P.A. 发明人 BALISTRERI, EMANUELE;BURZIO, MARCO
分类号 H01L21/822;H01L27/04;H03F3/45;H03H11/26;H03K3/0231;H03K3/03;H03K3/354;H03K5/13;(IPC1-7):H03H11/26 主分类号 H01L21/822
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