发明名称 UNIDIRECTIONAL SOLIDIFIED SILICON INGOT AND MANUFACTURING METHOD THEREOF, SILICON PLATE, SUBSTRATE FOR SOLAR CELL AND TARGET BASE MATERIAL FOR SPUTTERING
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce working cost and obtain high yield by weight in a unidirectional solidified silicon ingot, a manufacturing method thereof, a silicon plate, a substrate of a solar cell and a target base material for sputtering. <P>SOLUTION: The method of manufacturing a unidirectional solidified silicon ingot C has a process for dipping a polycrystalline silicon seed crystal S into a silicon molten liquid L stored in a crucible 1 and pulling up the silicon ingot with the seed crystal, wherein the seed crystal is planar. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003286024(A) 申请公布日期 2003.10.07
申请号 JP20020089132 申请日期 2002.03.27
申请人 MITSUBISHI MATERIALS CORP;JIEMUKO:KK 发明人 WAKITA SABURO;SASAKI JUNICHI;ISHIWARI YUJI
分类号 C01B33/02;C23C14/34;H01L31/04;(IPC1-7):C01B33/02 主分类号 C01B33/02
代理机构 代理人
主权项
地址