发明名称 |
UNIDIRECTIONAL SOLIDIFIED SILICON INGOT AND MANUFACTURING METHOD THEREOF, SILICON PLATE, SUBSTRATE FOR SOLAR CELL AND TARGET BASE MATERIAL FOR SPUTTERING |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce working cost and obtain high yield by weight in a unidirectional solidified silicon ingot, a manufacturing method thereof, a silicon plate, a substrate of a solar cell and a target base material for sputtering. <P>SOLUTION: The method of manufacturing a unidirectional solidified silicon ingot C has a process for dipping a polycrystalline silicon seed crystal S into a silicon molten liquid L stored in a crucible 1 and pulling up the silicon ingot with the seed crystal, wherein the seed crystal is planar. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2003286024(A) |
申请公布日期 |
2003.10.07 |
申请号 |
JP20020089132 |
申请日期 |
2002.03.27 |
申请人 |
MITSUBISHI MATERIALS CORP;JIEMUKO:KK |
发明人 |
WAKITA SABURO;SASAKI JUNICHI;ISHIWARI YUJI |
分类号 |
C01B33/02;C23C14/34;H01L31/04;(IPC1-7):C01B33/02 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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